? 2006 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 175 c 500 v v dgr t j = 25 c to 175 c; r gs = 1 m ? 500 v v gsm transient 40 v v gsm continuous 30 v i d25 t c = 25 c24a i dm t c = 25 c, pulse width limited by t jm 132 a i ar t c = 25 c44a e ar t c = 25 c55mj e as t c = 25 c 1.7 j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss , 10 v/ns t j 150 c, r g = 10 ? p d t c = 25 c 208 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.062 in.) from case for 10 s 300 c v isol 50/60 hz, rms, 1 minute 2500 v~ f c mounting force 20..120 / 4.5..25 n/lb weight 5g ds99319e(03/06) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv dss v gs = 0 v, i d = 250 a 500 v v gs(th) v ds = v gs , i d = 4 ma 2.5 5.0 v i gss v gs = 30 v dc , v ds = 0 100 na i dss v ds = v dss 25 a v gs = 0 v t j = 125 c 500 a r ds(on) v gs = 10 v, i d = 22 a 150 m ? n-channel enhancement avalanche rated fast intrinsic diode ixfr 44n50p v dss = 500 v i d25 =24 a r ds(on) 150 m ? ? ? ? ? t rr 200 ns g = gate d = drain s = source isolated tab g d s isoplus247 (ixfr) e153432 features l international standard isolated package l ul recognized package l silicon chip on direct-copper-bond substrate - high power dissipation - isolated mounting surface - 2500v electrical isolation l unclamped inductive switching (uis) rated l low package inductance - easy to drive and to protect l fast intrinsic diode advantages l easy to mount l space savings l high power density polarhv tm hiperfet power mosfet isoplus247 tm (electrically isolated back surface)
ixys reserves the right to change limits, test conditions, and dimensions. ixfr 44n50p symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 20 v; i d = 22 a, note 1 32 s c iss 5440 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 639 pf c rss 40 pf t d(on) 25 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 22 a 27 ns t d(off) r g = 3 ? (external) 70 ns t f 18 ns q g(on) 98 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 22 a 35 nc q gd 30 nc r thjc 0.6 c/w r thcs 0.15 c/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 30 a i sm repetitive 132 a v sd i f = i s , v gs = 0 v, note 1 1.5 v t rr i f = 22 a, 200 ns q rm -di/dt = 100 a/ s 0.6 c i rm v r = 100v 6.0 a isoplus247 outline notes: 1. pulse test, t 300 ms, duty cycle d 2 % ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2
? 2006 ixys all rights reserved ixfr 44n50p fig. 6. drain current vs. case temperature 0 5 10 15 20 25 30 35 40 45 50 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes fig. 1. output characteristics @ 25oc 0 5 10 15 20 25 30 35 40 45 01234567 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 2. extended output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 100 0 3 6 9 12 15 18 21 24 27 30 v ds - volts i d - amperes v gs = 10v 8v 7v 5v 6v fig. 3. output characteristics @ 125oc 0 5 10 15 20 25 30 35 40 45 0246810121416 v ds - volts i d - amperes v gs = 10v 7v 6v 5v fig. 4. r ds(on) normalized to i d = 22a value vs. junction temperature 0.4 0.8 1.2 1.6 2 2.4 2.8 3.2 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade r ds(on) - normalized v gs = 10v i d = 44a i d = 22a fig. 5. r ds(on) normalized to i d = 22a value vs. drain current 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 0 102030405060708090100 i d - amperes r ds(on) - normalized v gs = 10v t j = 125oc t j = 25oc fig. 6. maximum drain current vs. case temperature 0 3 6 9 12 15 18 21 24 27 -50 -25 0 25 50 75 100 125 150 t c - degrees centigrade i d - amperes
ixys reserves the right to change limits, test conditions, and dimensions. ixfr 44n50p fig. 7. input admittance 0 5 10 15 20 25 30 35 40 45 50 55 60 65 3.5 4 4.5 5 5.5 6 6.5 v gs - volts i d - amperes t j = 125oc 25oc - 40oc fig. 8. transconductance 0 5 10 15 20 25 30 35 40 45 50 55 60 0 10203040506070 i d - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 9. forward voltage drop of intrinsic diode 0 20 40 60 80 100 120 140 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 v sd - volts i s - amperes t j = 125oc t j = 25oc fig. 10. gate charge 0 1 2 3 4 5 6 7 8 9 10 0 102030405060708090100 q g - nanocoulombs v gs - volts v ds = 250v i d = 22a i g = 10ma fig. 11. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ds - volts capacitance - picofarads f = 1 mhz c iss c rss c oss fig. 12. forward-bias safe operating area 1 10 100 1,000 10 100 1000 v ds - volts i d - amperes t j = 150oc t c = 25oc 25s 1ms 100s r ds(on) limit 10ms dc
? 2006 ixys all rights reserved ixfr 44n50p fig. 13. maximum transient thermal resistance 0.01 0.10 1.00 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds r (th)jc - oc / w ixys ref: t_44n50p (8j) 03-21-06-b.xls
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